Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition

Abstract

A selectively confined V-shaped carbon-tetrachloride-doped GaAs epilayer grown inside a U-groove by one-step growth has been successfully fabricated on a patterned GaAs substrate by atmospheric pressure metalorganic chemical vapor deposition. A dramatic lateral growth enhancement was obtained by supplying carbon tetrachloride and allowed selective epitaxy. This one-step maskless selective epitaxy does not require any masking material. The selective epitaxy has also been demonstated in a U-shaped groove array.