| 2004-02-09 | Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | Song, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2005-03 | Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2006-02 | Polarized optical properties of a GaInP lateral superlattice | Min, KI; Lim, JR; Kim, JS; Rho, H; Hahn, JR; Song, JD; Choi, WJ; Kim, JM; Lee, YT |
| 2005-02 | Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy | Choi, WJ; Rho, H; Song, JD; Lee, JI; Cho, YH |
| 2004-12 | Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing | Kwon, BJ; Hwang, JS; Cho, YH; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H |
| 2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2006-05 | Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication | Song, JD; Choi, WJ; Lee, JI; Lee, JY |
| 2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
| 2005-11-15 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | Kim, HS; Suh, JH; Park, CG; Lee, SJ; Noh, SK; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-11 | Study on superluminescent diodes using InGaAs-InAs chirped quantum dots | Han, IK; Heo, DC; Song, JD; Lee, JI |
