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Study on superluminescent diodes using InGaAs-InAs chirped quantum dots

Authors
Han, IK; Heo, DC; Song, JD; Lee, JI
Issue Date
2004-11
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1193 - 1195
Abstract
We have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones.
Keywords
quantum dots; superluminescent diodes; atomic layer epitaxy
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/137110
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KIST Article > 2004
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