| 1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
| 2002-10 | Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation | Kim, HJ; Lee, SH; Jo, J; Nishihara, Y; Park, YJ |
| 1997-08-11 | Reversible transition between InGaAs dot structure and InGaAsP flat surface | Ozasa, K; Aoyagi, Y; Park, YJ; Samuelson, L |
| 2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
| 2002-06 | Role of insertion layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JY; Lee, C |
| 1998-11 | Selective formation of InAs quantum dot structures grown by molecular beam epitaxy | Hahn, CK; Jang, YJ; Oh, CS; Park, YJ; Kim, EK; Min, SK; Park, KH; Park, JH |
| 1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
| 2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han, I; Choi, WJ; Kim, HJ; Park, YJ; Cho, WJ; Lee, JI; Chovet, A; Brini, J |
| 1999-04-01 | Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects | Park, YJ; Andleigh, VK; Thompson, CV |
| 2005-06-06 | Single-crystalline diluted magnetic semiconductor GaN : Mn nanowires | Choi, HJ; Seong, HK; Chang, J; Lee, KI; Park, YJ; Kim, JJ; Lee, SK; He, RR; Kuykendall, T; Yang, PD |
| 2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | Son, SH; Choi, BH; Cho, KH; Hwang, SW; Park, YM; Park, YJ; Kim, EK; Ahn, D |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 2003-02 | Spectroscopic ellipsometric properties of Ga1-xFexAs dilute magnetic semiconductors | Lee, H; Kang, TD; Park, YJ; Oh, HT; Cho, HY; Moriya, R; Munekata, H |
| 2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2001-12 | Structural investigation of GaN powders thermally annealed at various temperatures | Hong, JK; Sun, KT; Kim, S; Sung, MY; Park, CS; Koh, EK; Park, IW; Park, YJ; Kim, EK |
| 1999-07 | Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy | Bae, IT; Seong, TY; Park, YJ; Kim, EK |
| 2005-11-15 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | Kim, HS; Suh, JH; Park, CG; Lee, SJ; Noh, SK; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 1997-06 | Study of defects generated from a nitridation of GaAs surface | Park, YJ; Kim, EK; Han, IK; Min, SK; OKeeffe, P; Mutoh, H; Munekata, H; Kukimoto, H |
| 2005-05-15 | Superparamagnetic properties of nickel nanoparticles in an ion-exchange polymer film | Yoon, M; Kim, Y; Kim, YM; Volkov, V; Song, HJ; Park, YJ; Park, IW |
| 2004-01 | Synthesis and magnetic properties of Zn1-xMnxO films prepared by the sol-gel method | Kim, YM; Yoon, M; Park, IW; Park, YJ; Lyou, JH |
| 2000-01 | Synthesis of crack-free thick diamond wafer by step-down control of deposition temperature | Lee, JK; Park, YJ; Eun, KY; Baik, YJ; Park, JW |
| 1999-08 | Synthesis of cubic boron nitride thin films by low-energy ion beam assisted deposition by applying substrate bias | Park, YJ; Baik, YJ |
| 2001-08-13 | Tertiary grain growth driven by surface energy | Jung, JK; Park, YJ; Hwang, NM; Joo, YC |
| 2002-04 | The effect of metallic catalysts on the synthesis of GaN micro-crystals | Roh, CH; Park, YJ; Kim, EK; Shim, KB |
| 2000-09 | The effect of N+-implanted Si(111) substrate and buffer layer on GaN films | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
| 2003-02 | The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers | Kim, J; Park, YJ; Byun, D; Kim, EK; Koh, EK; Park, IW |
| 2004-10 | The effects of strained sapphire(0001) substrate on the structural quality of GaN epilayer | Cho, YS; Kim, J; Park, YJ; Na, HS; Kim, HJ; Kim, HJ; Yoon, E; Kim, YW |
