| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1994-05 | SPIN-WAVE STIFFNESS CONSTANTS OF AMORPHOUS FE-ZR-B-NB ALLOYS | YU, SC; KIM, KS; KIM, MS; KIM, KY; NOH, TH |
| 1990-03 | SYSTEMATIC ANALYSIS OF DIURETIC DOPING AGENTS BY HPLC SCREENING AND GC/MS CONFIRMATION | PARK, SJ; PYO, HS; KIM, YJ; KIM, MS; PARK, JS |
| 1995-03 | TEMPERATURE-DEPENDENT ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; SON, CS; LEE, MS; KIM, Y; KIM, MS; MIN, SK |
| 1995-09-25 | THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-05 | THE FACET EVOLUTION DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
