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SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

Authors

KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH

Issue Date

1990-09

Publisher

AMER INST PHYSICS

Citation

JOURNAL OF APPLIED PHYSICS, v.68, no.6, pp.2747 - 2751

Keywords

delta-doping; MOCVD; GaAs

ISSN

0021-8979

URI

https://pubs.kist.re.kr/handle/201004/147060

DOI

10.1063/1.346451

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KIST Article > Others

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