| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 1998-11 | Selective formation of InAs quantum dot structures grown by molecular beam epitaxy | Hahn, CK; Jang, YJ; Oh, CS; Park, YJ; Kim, EK; Min, SK; Park, KH; Park, JH |
| 1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
| 2001-03-05 | Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate | Choi, BH; Park, CM; Song, SH; Son, MH; Hwang, SW; Ahn, D; Kim, EK |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2000-12 | Self-assembled InAs quantum dots on GaAs (100) and (311)A substrates | Cho, S; Choi, YK; Kim, EK |
| 1996-10 | Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates | Hahn, CK; Kim, EK; Jeun, IS; Kim, KM; Kim, MS; Min, SK; Park, JH |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
| 2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | Son, SH; Choi, BH; Cho, KH; Hwang, SW; Park, YM; Park, YJ; Kim, EK; Ahn, D |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 1997-05-15 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | Han, IK; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Kim, Y; Lim, H; Park, HL |
| 1999-09-15 | Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern | Son, MH; Jung, SK; Min, BD; Hyun, CK; Choi, BH; Kim, EK; Kim, Y; Lim, JS |
| 2000-01-10 | Structural change and photo-response in porous poly-Si/Si | Lyou, J; Yoon, KS; Kim, EK; Min, SK |
| 1998-02 | Structural characterization of TiO2 thin films on GaAs(100) substrate by MOCVD | Han, YK; Lee, TG; Yom, SS; Sons, MH; Kim, EK; Min, SK; Lee, JY |
| 2001-12 | Structural investigation of GaN powders thermally annealed at various temperatures | Hong, JK; Sun, KT; Kim, S; Sung, MY; Park, CS; Koh, EK; Park, IW; Park, YJ; Kim, EK |
| 1999-07 | Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy | Bae, IT; Seong, TY; Park, YJ; Kim, EK |
| 2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
| 2001-12 | Studies on the retention behaviour of some thiazolylazo derivatives in reversed phase liquid chromatography | Lee, W; Kim, MK; Kim, EK; Park, KS; Kim, YS |
| 1997-06 | Study of defects generated from a nitridation of GaAs surface | Park, YJ; Kim, EK; Han, IK; Min, SK; OKeeffe, P; Mutoh, H; Munekata, H; Kukimoto, H |
| 1996-01 | Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor | Kim, EK; Son, MH; Lee, HN; Kim, YT; Min, SK |
| 1998-05-15 | Suppression of Ostwald ripening in In0.5Ga0.5As quantum dots on a vicinal (100) substrate | Min, BD; Kim, Y; Kim, EK; Min, SK; Park, MJ |
| 1997-11-21 | Temperature-dependent Hall analysis of carbon-doped GaAs | Kim, SI; Son, CS; Chung, SW; Park, YK; Kim, EK; Min, SK |
| 2002-04 | The effect of metallic catalysts on the synthesis of GaN micro-crystals | Roh, CH; Park, YJ; Kim, EK; Shim, KB |
| 2000-09 | The effect of N+-implanted Si(111) substrate and buffer layer on GaN films | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
| 2003-02 | The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers | Kim, J; Park, YJ; Byun, D; Kim, EK; Koh, EK; Park, IW |
| 2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
| 1998-11 | The formation and optical properties of InGaAs quantum dots on exact and 2 degrees off (100) GaAs substrates | Min, BD; Kim, Y; Kim, EK; Min, SK; Park, J |
| 1999 | The origin of luminescence from cerium oxide on silicon | Choi, WC; Lee, HN; Kim, Y; Kim, EK |
| 1997-06-01 | The role of a thin amorphous silicon layer in the fabrication of micro-pored silicon | Kim, EK; Lee, MS; Choi, WC; Lee, HN; Min, SK; Lyou, J |
