| 2001-08-13 | Tertiary grain growth driven by surface energy | Jung, JK; Park, YJ; Hwang, NM; Joo, YC |
| 2002-04 | The effect of metallic catalysts on the synthesis of GaN micro-crystals | Roh, CH; Park, YJ; Kim, EK; Shim, KB |
| 2000-09 | The effect of N+-implanted Si(111) substrate and buffer layer on GaN films | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
| 2003-02 | The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers | Kim, J; Park, YJ; Byun, D; Kim, EK; Koh, EK; Park, IW |
| 2004-10 | The effects of strained sapphire(0001) substrate on the structural quality of GaN epilayer | Cho, YS; Kim, J; Park, YJ; Na, HS; Kim, HJ; Kim, HJ; Yoon, E; Kim, YW |
| 1997-11-01 | The effects of the stress dependence of atomic diffusivity on stress evolution due to electromigration | Park, YJ; Thompson, CV |
| 2005-02 | The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD | Park, K; Ahn, E; Jeon, YJ; Cheong, HM; Kim, JS; Kim, EK; Lee, J; Park, YJ; Lee, GD; Yoon, E |
| 2002-05-31 | Thermal evolution of alpha- and beta-phases in the thin GaN on (001) GaAs | Park, YJ; Koh, EK; Park, CS; Park, IW; Kim, EK |
| 2003-02 | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO2 capping layers | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; E. K. Kim; C. M. Lee; H.-W. Kim |
| 2005-05 | Three-dimensional simulation of microstructure evolution in damascene interconnects: Effect of overburden thickness | Jung, JK; Hwang, NM; Park, YJ; Joo, YC |
| 1996-09 | Transient characteristics of nitrogen gas-pulsed electron cyclotron resonance plasma | Park, YJ; Ozasa, K; OKeeffe, P; Aoyagi, Y; Min, SK |
| 2001-06 | Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures | Kim, MG; Yun, Z; Lyou, J; Cho, S; Park, YJ; Kim, EK |
