Showing results 1 to 14 of 14
Issue Date | Title | Author(s) |
---|---|---|
2021-02 | Comparative study of metamorphic InAs layers grown on GaAs and Si for mid-infrared photodetectors | Ryu, Geunhwan; Kang, Soo Seok; Han, Jae-Hoon; Chu, Rafael Jumar; Jung, Daehwan; Choi, Won Jun |
2025-01 | Engineering Photocarrier Redistributions in Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructures for Radiative Recombination Enhancements | Chu, Rafael Jumar; Lung, Quang Nhat Dang; Laryn, Tsimafei; Choi, Won Jun; Jung, Daehwan |
2020-11-23 | Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform | Hong, Namgi; Chu, Rafael Jumar; Kang, Soo Seok; Ryu, Geunhwan; Han, Jae-Hoon; Yu, Ki Jun; Jung, Daehwan; Choi, Won Jun |
2023-02 | GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer | Kim, Yeonhwa; Madarang May Angelu; Ju Eun Kyo; Laryn Tsimafei; Chu, Rafael Jumar; Kim Tae Soo; Ahn, Dae-Hwan; Kim, Taehee; Lee, In-Hwan; Choi, Won Jun; Jung, Daehwan |
2023-04 | Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer | Lung, Quang Nhat Dang; Chu, Rafael Jumar; Kim, Yeonhwa; Laryn, Tsimafei; Madarang, May Angelu; Kovalchuk, Oleksiy; Song, Yong-Won; Lee, In-Ho; Choi, Changsoon; Choi, Won Jun; Jung, Daehwan |
2023-08 | High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | Ahn, DaeHwan; Jeon, Sunghan; Suh, Hoyoung; Woo, Seungwan; Chu, Rafael Jumar; Jung, Daehwan; Choi, Won Jun; Park, Donghee; Song, Jin-Dong; Choi, Woo-Young; Han, Jae-Hoon |
2024-09 | Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple-Junction Solar Cells | Kim, Yeonhwa; Shin, Hyun-Beom; Ju, Eunkyo; Madarang, May Angelu; Chu, Rafael Jumar; Laryn, Tsimafei; Kim, Taehee; Lee, In-Hwan; Kang, Ho Kwan; Choi, Won Jun; Jung, Daehwan |
2024-07 | Improving the Open-Circuit Voltage of III-V Layer-Filtered Si Subcells for Monolithic III-V/Si Tandem Solar Cells | Ju, Eunkyo; Madarang, May Angelu; Kim, Yeonhwa; Chu, Rafael Jumar; Laryn, Tsimafei; Kim, Younghyun; Kim, Inho; Kim, Tae Soo; Jeon, Sunghan; Lee, In-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
2024-01 | Low-threshold 2 μm InAs/InP quantum dash lasers enabled by punctuated growth | Chu, Rafael Jumar; Laryn, Tsimafei; Ahn, Dae-Hwan; Han, Jae-Hoon; Kim, HoSung; Choi, Won Jun; Jung, Daehwan |
2023-06 | Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications | Woo, Seungwan; Yeon, Eungbeom; Chu, Rafael Jumar; Kyhm, Jihoon; Son, Hoki; Jang, Ho Won; Jung, Daehwan; Choi, Won Jun |
2021-04-05 | Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 mu m emission enabled by ripening process | Chu, Rafael Jumar; Ahn, Dae-Hwan; Ryu, Geunhwan; Choi, Won Jun; Jung, Daehwan |
2020-12-28 | Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si | Ryu, Geunhwan; Woo, Seungwan; Kang, Soo Seok; Chu, Rafael Jumar; Han, Jae-Hoon; Lee, In-Hwan; Jung, Daehwan; Choi, Won Jun |
2024-06 | Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III-V Quantum Dot Lasers on a Si Substrate | Laryn, Tsimafei; Chu, Rafael Jumar; Kim, Yeonhwa; Madarang, May Angelu; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
2023-04 | Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants | Madarang, May Angelu; Chu, Rafael Jumar; Kim, Yeonhwa; Lung, Quang Nhat Dang; Ju, Eunkyo; Choi, Won Jun; Jung, Daehwan |