Browsing byAuthorKIM JIN SANG

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Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
-A study on the passivation of HgCdTe with CdZnTeSONG JONG HYEONG; AN SE YOUNG; KIM JIN SANG; SUH SANG HEE; Hong Jin Ki; Kim Yong Sic; 김선웅; 박만장
-Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substratesSUH, SANG HEE; KIM JIN SANG; 서대원; S-R Hahn; S. Sivananthan
-Characteristics of HgCdTe on CdZnTe grown by MOVPESUH SANG HEE; KIM JIN SANG; KIM HYUNG JOON
-Current injection UV-emission from InAIGan multi-quantum-well light emitting diodesA. Kinoshita; H. Hirayama; M. Ainoya; KIM JIN SANG; A. Hirata; Y. Aoyagi
-Effect of iodine doping on composition of Hg1-xCdxTe grown by metal organic vapor phase epitaxy (MOVPE)SONG, JONG HYEONG; KIM JIN SANG; SUH SANG HEE
-Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamberKIM JIN SANG; SONG JONG HYEONG; SUH SANG HEE
-Flip chip bonder for automactic parallel aligning of IR sensors and read out integrated circuitsSUH SANG HEE; SONG JONG HYEONG; AN SE YOUNG; KIM JIN SANG
-Low-energy ion beam treatment of α-Al2O3 (0001) and improvement of photoluminescence of ZnO thin films박종용; 노영수; 박병진; 이현우; Ji-Won Choi; KIM JIN SANG; Y. Ermakov; YOON SEOK JIN; Oh Young-Jei; CHOI, WON-KOOK
-MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge methodKIM JIN SANG; Kum Dong Wha; 이지화
-MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method김주성; Byun Dongjin; KIM JIN SANG; Kum Dong Wha

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