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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2011-10-03Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTeWu, Zhe; Zhang, Gang; Park, Youngwook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2010-11Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory ApplicationZhang, Gang; Ra, Chang Ho; Li, Hua-Min; Shen, Tian-zi; Cheong, Byung-ki; Yoo, Won Jong
2012-10Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
2011-03Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTeZhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki
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