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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)
2024-12Accurate and efficient electronic structure calculations of semiconductor heterostructures using GGA-1/2 formalismKim, Seungchul
2014-02-25Dielectric function and critical points of AlP determined by spectroscopic ellipsometryHwang, S. Y.; Kim, T. J.; Jung, Y. W.; Barange, N. S.; Park, H. G.; Kim, J. Y.; Kang, Y. R.; Kim, Y. D.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.
2001-09-01Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formationLee, H; Kim, SM; Park, YJ; Kim, EK
2018-08-27High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layerRoh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, YunHeub; del Alamo, Jesus A.; Song, JinDong
2013-03-11Interband transitions and dielectric functions of InGaSb alloysKim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D.
2009-09-14Interband transitions of InAsxSb1-x alloy filmsKim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D.
2014-09The growth of GaSb/Al0.33Ga0.67Sb MQW on n-Silicon (100) with Al0.66Ga0.34Sb/AlSb SPS layersYoen, Kyu Hyoek; Song, Jin Dong; Lee, Eun Hye; Jang, Hye Joung; Bae, Min Han; Kim, Jun Young; Han, Il Ki; Choi, Won Jun
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