| - | Comparison of optical gain and α-factor in laser diodes having different quantum dot structures | Kim Kyoung Chan; Youngchae, Yoo; J. H. Jung; Han, Il Ki; Lee, Jung Il; D. H. Kim; T.G. Kim |
| - | Effect of linewidth enhancement factor in the 1.55-㎛ MQW high-power laser diodes | Han Il Ki; Si Hyung Cho; Lee Jung Il |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2010-04-02 | Gain-dependent linewidth enhancement factor in the quantum dot structures | Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun |
| 2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2020-03 | Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on Silicon | Buffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
| - | Investigation of linewidth enhancement factor for two types of quantum dot laser diode | Kim Kyoung Chan; Youngchae, Yoo; Jung Jung Hwa; Jeong Jin Wook; Han, Il Ki; Lee, Jung Il; Dong Ho Kim; Tae Geun Kim |
| 2003-09 | Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes | Heo, DC; Han, IK; Lee, JI; Jeong, JC |
| - | Optical gain and α-factor in InAs quantum dot laser diodes | Kim Kyoung Chan; T.G. Kim; Han, Il Ki; Youngchae, Yoo; Lee, Jung Il |
| - | Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes | SONG, JIN-DONG; 박영민; Shin, Jae Cheol; DU-CHANG HEO; 배형철; 임재구; Park, Young Ju; Choi, Won Jun; Han, Il Ki; Cho, Woon Jo; Lee, Jung Il; 김형석; 박찬경 |
| - | Study on optical properties of InAs/InGaAs five-stacked quantum-dot laser diode using reactive ion etching | Youngchae, Yoo; Yoon Hong; Kim Kyoung Chan; Jeong Jin Wook; Lee, Jung Il; Gil-Ho Kim; Han, Il Ki |
| - | Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures | Han Il Ki; Heo Duchang; Choi Won Jun; Lee Jung Il; 이주인 |
| - | The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxy | Heo, Duchang; SONG, JIN-DONG; Choi, Won Jun; Lee, Jung Il; Jeong, Jichai; Han, Il Ki |
| - | The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | 허두창; Bae, Hyung Cheol; Lee, Jung Il; Jeong, Jichai; Han, Il Ki |
| 2007-06 | Thermal analysis of InAs quantum dot laser diodes with an additional Au layer on p-metal | Jung, Jung Hwa; Kim, Hyun Jae; Kim, Kyoung Chan; Lee, Jung Il; Han, Il Ki |
