| 2015-01 | Heterogeneity of tremor mechanisms assessed by tremor-related cortical potential in mice | 박영균; 최지현; 이충기; 김세연; 김영수; 장기영; 백선아; 김대수 |
| 1996-01 | Hydrogen in silicon: a discussion of diffusion and passivation mechanisms. | 박영균; B. L. Sopori; X. Deng; J. P. Benner; A. Rohatgi; P. Sana; S. K. Estreicher; M. A. Roberson |
| 1995-01 | Hydrogen in silicon: Current understanding of diffusion and passivation mechanisms. | 박영균; B. L. Sopori; Stefan K. Estreicher; X. Deng; J. P. Benner; A. Rohatgi; P. Sana; M. A. Roberson |
| 1996-03 | Hydrogen-oxygen interactions in silicon. | 박영균; Stefan K. Estreicher; Peter A. Fedders |
| 1996-01 | Hydrogen-oxygen interactions in silicon. | 박영균; Stefan K. Estreicher; Peter A. Fedders |
| 1999-01 | Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation | 김동준; 김용태; 박영균; 심현상; 박종완 |
| 2000-06 | Improvement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper] | 김용태; 김익수; 박영균 |
| 2000-07 | Influence of rapid thermal annealing of cobalt coatacts to p-GaN | 김제원; 박영균; 김성일; 김용태; 최인훈; Akira Yoshida; 김희준 |
| 1999-05 | InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석 | 김제원; 박영균; 김성일; 김용태; 최인훈; 이석헌; 이정희 |
| 1999-04 | InGaN/GaN 이종접합 구조에 대한 유효 띠간격과 흡수 끝머리의 비교 | 김제원; 최인훈; 박영균; 김용태 |
| 1999-06 | Ionization energies of germanium-doped AlxGa1-xAs epilayers grown on GaAs substrates | 김효진; 박영균; 김성일; 김용태; 김은규; 문성욱; 김태환 |
| 1997-04 | Ionization energy of Ge in AlGaAs | 김효진; 김성일; 최원철; 박영균; 김은규; 민석기; 김태완 |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrate by metalorganic chemical vapor deposition | 손창식; 박영균; 김성일; 김용; 김은규; 민석기; 최인훈 |
| 1997-07 | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | 손창식; 김성일; 박영균; 황성민; 한철구; 김용; 김은규; 민석기; 최인훈 |
| 1999-06 | Memory window of highly c-axis oriented ferroelectric YMnO3 thin films | 이호녕; 김용태; 박영균 |
| 1996-01 | Molecular dynamics study of defect formation in a-Si:H using 224 and 232 atom supercells. | 박영균; Charles W. Myles; Byung C. Ha |
| 1997-06 | Molecular-dynamic study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon | 박영균; 민석기; 김은규 |
| 1994-01 | Molecular-dynamics simulations of defect formation in a-Si:H. | 박영균; Charles W. Myles |
| 1995-01 | Molecular-dynamics study of defect formation in a-Si:H. | 박영균; Charles W. Myles |
| 1995-01 | Molecular-dynamics study of defect formation in a-Si:H. | 박영균; Charles W. Myles |
| 1996-10 | Molecular-dynamics study of defect formation in hydrogenated amorphous silicon. | 박영균; 김은규; 민석기 |
| 1995-01 | Molecular-dynamics study of the vacancy and vacancy-hydrogen complexes in silicon. | 박영균; Charles W. Myles; S. K. Estreicher; Peter A. Fedders |
| 1995-07 | Molecular-dynamics study of the vacancy and vacancy-hydrogen interactions in silicon. | 박영균; Charles W. Myles; Stefan K. Estreicher; Peter A. Fedders |
| 1996-10 | Molecular-dynamics study of the vacancy-hydrogen and vacancy-deuterium complexes in silicon. | 박영균; 김은규; 민석기 |
| 1997-09 | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | 김은규; 김성일; 김용; 박영균; 손창식; 한철구; 황성민; 민석기; 최인훈 |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | 김은규; 김태근; 손창식; 김성일; 박영균; 김용; 민석기; 최인훈 |
| 1998-08 | Optical constants of AlGaN grown by molecular beam epitaxy | 김제원; 손창식; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 1998-11 | Optical properties of AlxGa1-xN grown by plasma induced molecular beam epitaxy | 김제원; 손창식; 최인훈; 박영균; 김용태 |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | 김효진; 이대욱; 김태환; 박영균; 김성일; 김은규; 민석기 |
| 2001-12 | Performance of the W-B-N ternary diffusion barrier for Cu metallization | 이창우; 김용태; 이효석; 박영균; 이택홍; Q. Chen; Nevil V. Richardson |
