| 1998-02 | Reactive ion etching of Pt thin films for fabrication of microcapacitor | 김권석; 이종명; 신주철; 이전국; 김형준 |
| 2019-06 | Reinterpretation of single-wall carbon nanotubes by Raman spectroscopy | 이전국; 문동주; 이재갑; 박예슬; K. P. S. S. Hembram; 류란; 장병진; 이우영; 이상길; 김진규; 김용일 |
| 2003-03 | Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering | 이시형; 윤기현; 정덕수; 이전국 |
| 2001-01 | Relaxor behavior of MgO dispersed-Pb(Mg1/3Nb2/3)O3-PbTiO3 (90/10) nanocomposite thin films | 박동균; 이전국; 정덕수; 박종완 |
| 2005-09 | Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications | 박재완; 박종완; 김달영; 이전국 |
| 2005-09 | Resisive switching behavior of Cr-doped SrZrO3 Perovskite thin films for random access memory applications | 양민규; 김달영; 박재완; 이전국 |
| 2014-12 | Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process | 조영철; 정규호; 김종민; 우현석; 한재석; 김형상; 홍진표; 이전국; 임형식 |
| 2011-08 | Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films | 양민규; 박재완; 이전국 |
| 2012-04 | Resistive Switching Behavior in Ti/MnO2/Pt Structure for Nonvolatile Memory Devices | 이전국; 양민규; 최선영 |
| 2010-05 | Resistive Switching Behavior of Cr-Doped SrZrO3 Perovskite Thin Films by Oxygen Pressure Change | 양민규; 박재완; 이전국 |
| 2006-06 | Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3:Cr memory films | 박재완; 정규호; 양민규; 이전국; 김달영; 박종완 |
| 2010-08 | Resistive switching characteristics of TiN/MnO2/Pt memory devices | 양민규; 박재완; 고태국; 이전국 |
| 2009-11 | Resistive switching of oxide semiconducting thin films for nonvolatile memory devices | 양민규; 고태국; 이전국 |
| 2010-06 | Resistive Switching Properties of Cr-Doped SrZrO3 Thin Film on Si Substrate | 양민규; 고태국; 박재완; 이전국 |
| 2008-10 | Resistive switching using a hetero junction structure consisting of transition metal oxide | 양민규; 고태국; 이전국 |
| 2002-04 | RF MEMS 박막형 고주파 부품 | 이전국 |
| 1998-01 | Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by R.F. magnetron sputtering | 배철휘; 이전국; 이시형; 박윤백; 정형진 |
| 2003-04 | Role of AlN piezoelectric crystal orientation in solidly mounted film bulk acoustic wave resonators | 이시형; 강성철; 한상철; 주병권; 윤기현; 이전국 |
| 1999-12 | Role of Sb substitution for Bi site in SrBi2Ta2O9 thin film | 김주형; 이전국; 김용태; 채희권 |
| 2000-09 | Role of the Bi2O3 in SrBi2TaNbO9/Bi2O3/SrBi2TaNbO9 heterostructure and low temperature annealing property | 박윤백; 장세명; 김주형; 이전국; 박종완 |
| 1991-01 | Selectively absorbing properties of sol gel dip coated indium tin oxide thin films on a glass pane. | 이전국; 정형진; D.H. Lee; H.H. Lee |
| 2005-01 | Self-lubricating composite coating on air foil bearing shaft by hollow cathode plasma jet | 양민규; 양효승; 박종구; 류근; 이용복; 이전국 |
| 2007-11 | Set Power Dependency on the Resistive Switching in Cr-doped SrZrO3 Thin Films for Nonvolatile Memory Devices | 박재완; 정규호; 양민규; 박종완; 이전국 |
| 2008-08 | Set voltage improvement of resistive switching in MnOx using oxygen annealing | 양민규; 박재완; 고태국; 이전국 |
| 2009-01 | Sliding wear of silicon carbide modified by etching with chlorine at various temperatures | Choi, H. -J.; Bae, H. -T; 이전국; Na, B. -C; McNallan, M. J.; Lim, D. -S. |
| 2002-04 | SOI 웨이퍼를 이용한 압전박막 공진기의 설계 및 제작 | 김인태; 박윤권; 이시형; 이윤희; 이전국; 김남수; 주병권 |
| 2004-05 | SrFeO3 nanoparticles-dispersed SrMoO4 insulating thin films deposited from Sr2FeMoO6 target in oxygen atmosphere | 김달영; 김진수; 박배호; 이전국; 김장희; 이제현; 장준연; 김희중; 김인영; 박윤 |
| 1998-12 | Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method | 김태송; 김동주; 이전국; 정형진 |
| 1996-12 | Structural and ferroelectric properties of the c-axis oriented SrBi2Ta2O9 thin films deposited by the radio-frequency magnetron sputtering | 송태권; 이전국; 정형진 |
| 1996-01 | Structural and ferroelectric properties of the R.F. magnetron sputtered SBTO thin films | 이전국; 정형진; T.S. Kim; T.K. Song |
