1992-01 | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | 강광남; 이정일; 김충환; 박홍이; 한일기 |
2009-11 | Selective epitaxy growth of multiple-stacked InP/InGaAs on the planar type by chemical beam epitaxy | 한일기; 이정일 |
1995-01 | Selective etching characteristics of ITO/semiconductor and ITO/BaTiO//3 structures by reactive ion etching. | 강광남; 이정일; 한일기; 이윤희; 김회종; 이석; 오명환; 김선호; 박홍이 |
2012-02 | Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced
Molecular Beam Epitaxy | 이은혜; 송진동; 김수연; 한일기; 장수경; 이정일 |
2010-08 | Self-assembled growth of GaAs anti quantum dots in InAs matrix by migration enhanced molecular beam epitaxy | 이은혜; 김수연; 송진동; 한일기; 이정일 |
2005-06 | Self-Assembled Qauntum Dots | 최원준; 송진동; 박용주; 박영민; 한일기; 이정일 |
2003-04 | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; 허두창; 한일기; 조운조; 최원준; 박용주; 이정일; 이천 |
1997-12 | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | 최원준; 한상민; Syed ljaz Shah; 최석근; 우덕하; 한일기; 김회종; 김선호; 이정일; 강광남 |
1990-01 | Simple method to extract gate voltage dependent source/drain resistance in MOSFETs. | 강광남; 이정일; 이명복; 한일기; Y. J. Lee |
2002-08 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | 한일기; 최원준; 김회종; 박용주; 조운조; 이정일; Alain Chovet; Jean Brini |
2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | 한일기; 최원준; 김회종; 박용주; 조운조; 이정일; Alain Chovet; Jean Brini |
2015-04 | Simultaneous enhancement of upconversion and downshifting luminescence via plasmonic structure | 이규태; 박종현; 권석준; 권현근; 김지훈; 곽경원; 장호성; 김수연; 한준수; 이승환; 신동훈; 고형덕; 한일기; 주병권; 권순홍; 고두현 |
2010-02 | Single photon sources based on quantum dots/nanowires coupled with photonic crystal cavity | 하승규; 송진동; 임주영; 최원준; 한일기; 최경진; 박재관; 이정일; 사미르 보누아흐; 파브리스 도나티니; 장필립 푸아제; 레시당; 이용희; 김종수 |
2007-10 | Size distribution effects on self-assembled InAs quantum dots | S. I. Jung; H. Y. Yeo; I. Yun; 한일기; J. S. Kim; J. I. Lee |
2013-01 | Size tunability and optical properties of CdSe quantum dots for various growth conditions | Eun Yoo Ko; Joo In Lee; Ju-Won Jeon; In Hwan Lee; Yong Hyeon Shin; 한일기 |
2017-11 | Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells | 한일기; 박준서; 윤석횬; 김시준; Harrison S. Kim; 정재웅; 박민우 |
2016-10 | Sonication effect on all-polymer solar cell performance | 한일기; BARANGE NILESH; 김영동; 남민우; 박병남; 김병훈; 고두현 |
2005-02 | Sonochemical Synthesis of Silicon Nanocrystals | 이수진; 조운조; 진종식; 한일기 |
2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | 신재철; 최원준; 한일기; 박용주; 이정일; H.J. Kim; 최정우; 김은규 |
2002-08 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; 최원준; 한일기; 박용주; 이정일; E.K. Kim; H.J. Kim; J.W. Choi |
2003-06 | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | 신재철; 최원준; 한일기; 박용주; 이정일; 김은규; H.J. Kim; 최정우 |
1992-01 | Spectroscopic ellipsometric measurements of plasma-enhanced chemical vapor deposition-grown SiN//xInP structure. | 강광남; 이정일; 한일기; Y. J. Lee; S. Y. Kim |
1991-01 | Spectroscopic ellipsometry measurements on the silicon nitride films formed by PECVD in InP. | 강광남; 이정일; 한일기; 김상열 |
1997-05 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | 한일기; 김은규; 이정일; 김선호; 강광남; 김영태; 임한조; 박홍이 |
2019-12 | Strained-induced control of a pillar cavity-GaAs single quantum dot photon source | 한일기; 송진동; Inah Yeo; Doukyun Kim |
2009-07 | Structural and electrical properties of InAs thin films grown on AlAs0.32Sb0.68 meta-morphic buffer layer/GaAs for application as THz emitters | 김수연; 신상훈; 송진동; 한일기; 김태환; 조영달 |
2011-07 | Structural and optical properties of InAlAs/AlGaAs quantum dots for the 808-nm wavelength applications | 김수연; 이은혜; 송진동; 한일기; 이정일; 김태환 |
2010-07 | Structural and optical properties of InAlAs/AlGaAs self-assembled quantum dots on GaAs substrate for the 808-nm wavelength | 김수연; 송진동; 이은혜; 하승규; 신상훈; 한일기; 이정일; 김태환 |
2003-06 | Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication | 송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 이호성; 이정용 |
2011-08 | Structural and optical properties of InP/InGaP quantum structure for the 808-nm wavelength emission | 김수연; 이은혜; 송진동; 한일기; 이정일; 김태환 |