Showing results 1 to 5 of 5
Issue Date | Title | Author(s) |
---|---|---|
1995-01 | Advantage of rapid thermal annealing over furnace annealing for p-implanted metastable Si/Ge0.12Si0.88 | D.Y.C. Lie; 송종한; M.-A. Nicolet; N.D. Theodore |
1995-03 | Dependence of damage and strain on the temperature of Si irradiation in epitaxial Geㅊ.10Si0.90 films on Si(100) | D.Y.C. Lie; 송종한; A. Vantomme; F. Eisen; M.-A. Nicolet; N.D. Theodore; T. K. Carns; K.L. Wang |
1997-02 | SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100) | S. Im; 송종한; D.Y.C. Lie; F. Eisen; H. Atwater; M-A. Nicolet |
1995-01 | Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100) | D.Y.C. Lie; 송종한; M.-A. Nicolet; M.O. Tanner; S. Thomas; K.L. Wang |
1995-05 | Solid-phase epitaxial regrowth and dopant activation of P-implanted metastable pseudomorphic Ge0.12Si0.88 on Si(100) | D.Y.C. Lie; N.D. Theodore; 송종한; M.-A. Nicolet |