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Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)

Authors

D.Y.C. Lie; SONG JONG HAN; M.-A. Nicolet; M.O. Tanner; S. Thomas; K.L. Wang

Citation

Material Research Society Symposium Proceedings, v.379, pp.467 - 472

URI

https://pubs.kist.re.kr/handle/201004/111934

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KIST Conference Paper > Others

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