| 2004-07 | A micro-photoluminescence study of vertically stacked InAs-GaAs double-layer quantum dots | Young Chul Choi; Tae Geun Kim; 박영민; 박용주 |
| 2002-11 | Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice | 김광무; 박용주; 박영민; 현찬경; 김은규; 박정호 |
| 2000-11 | Alignment of InAs quantum dots on GaAs using the manipulation of strain fields | 김광무; 박용주; 박영민; 나종범; 현찬경; 김은규; 박정호 |
| 2000-04 | Alignment of the InAs quantum dots on GaAs using the manipulation of strain fields | 김광무; 박용주; 박영민; 현찬경; 김은규; 박정호 |
| 2007-01 | Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy | 김지훈; 박용주; 박영민; 송진동; 이정일; 김태환 |
| 2004-07 | Carrier dynamics in InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 2004-09 | Carrier dynamics in the coupled structure of InGaAs quantum dots in a well | 박영민; Keon-Ho Yoo; 박용주; 김광무; 송진동; 이정일 |
| 2000-11 | Control of semiconductor nano-structures for quantum devices | 김은규; 김효진; 김광무; 박영민; 박용주 |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | 노정현; 박용주; 김광무; 박영민; 김은규; 심광보 |
| 2006-08 | Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure | 정인영; 박영민; 박용주; 이정일; 김태환 |
| 2003-06 | Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs | 황성호; 신재철; 최원준; 박영민; 송진동; 박용주; 한일기; 조운조; 이정일; 한해욱 |
| 2009-07 | Development of an ozone gas sensor using single-walled carbon nanotubes | 박영민; 동기영; 이진우; 최진일; 배귀남; 주병권 |
| 2003-10 | Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication | 송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일 |
| 2005-03 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | 임재구; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일; T.W. Kim; H S Kim; C G Park |
| 2001-02 | Effect of Si doping on InAs/GaAs quantum dots | 조광식; 윤석호; 황희돈; 윤의준; 박영민; 박용주; 김은규; 임영수; 이정용 |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | 박영민; 박용주; 김광무; 노정현; 현찬경; 김은규 |
| 2000-11 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | 박세기; 박용주; 박영민; 김효진; 김은규; 이천 |
| 2003-08 | Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots | 임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일 |
| 2003-12 | Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy | 송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경 |
| 2004-11 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | 박영민; 박용주; 김광무; 이정일; 유건호 |
| 2000-01 | Effects of Si-molecular beam on the formation of InAs quantum dots | 박영민; 박용주; 김광무; 노정현; 현찬경; 김은규; 유근호 |
| 2003-02 | Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 2004-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | 박영민; 박용주; 김광무; 신재철; 송진동; 이정일; 유건호 |
| 2003-10 | Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique | 김지훈; 박용주; 박영민; 송진동; 신재철; 이정일; 김태환 |
| 2005-03 | Electron-Hole Separation in InAs Quantum Dots | 박영민; 박용주; 김광무; 송진동; 이정일 |
| 2005-05 | Estimation of built-in dipole moment in InAs quantum dots | 박영민; 박용주; 송진동; 이정일 |
| 2000-11 | Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates | 김효진; 박용주; 박영민; 박세기; 김은규; 김태환 |
| 2001-05 | Fabrication of wirelike InAs quantum dots on 2 ˚ -off GaAs (100) substrates by changing the thickness of the InAs layer | 김효진; 박용주; 박영민; 김은규 |
| 2000-09 | Fabrications of wire-like InAs quantum dots on 2o-off GaAs (100) substrates by control of the InAs layer thickness | 김효진; 박용주; 박영민; 김은규; 김태환 |
| 2004-09 | Formation mechanism of self-assembled quantum dots-in-a-well structure | 박용주; 박영민; 송진동; 이정일 |
