Browsing by Author 임재구

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Showing results 1 to 8 of 8

Issue DateTitleAuthor(s)
2003-10Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication송진동; 박영민; 임재구; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일
2005-03Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots임재구; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일; T.W. Kim; H S Kim; C G Park
2003-08Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots임재구; 최은하; 박용주; 박영민; 송진동; 최원준; 한일기; 조운조; 이정일
2003-12Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경
2004-10Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 이정일; H.S. Kim; 박찬경
2003-06Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication송진동; 박영민; 신재철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 이호성; 이정용
2003-05Structural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes송진동; 박영민; 신재철; 허두창; 배형철; 임재구; 박용주; 최원준; 한일기; 조운조; 이정일; 김형석; 박찬경
2003-04원자층성장된 InGaAs/GaAs 양자점의 광학 및 구조적 특성과 반도체레이저다이오드의 응용송진동; 허두창; 신재철; 박영민; 임재구; 최원준; 한일기; 박용주; 조운조; 이정일; 이호성; 이정용

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