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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2015-11-01Effects of sidewall MOS channel on performance of AlGaN/GaN FinFETSon, Dong-Hyeok; Jo, Young-Woo; Sindhuri, V.; Im, Ki-Sik; Seo, Jae Hwa; Kim, Yong Tae; Kang, In Man; Cristoloveanu, Sorin; Bawedin, Maryline; Lee, Jung-Hee
2017-11Extended Analysis of the Z(2)-FET: Operation as Capacitorless eDRAMNavarro, Carlos; Lacord, Joris; Parihar, Mukta Singh; Adamu-Lema, Fikru; Duan, Meng; Rodriguez, Noel; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Cristoloveanu, Sorin; Gamiz, Francisco
2017-12Z(2)-FET as Capacitor-Less eDRAM Cell For High-Density IntegrationNavarro, Carlos; Duan, Meng; Parihar, Mukta Singh; Adamu-Lema, Fikru; Coseman, Stefan; Lacord, Joris; Lee, Kyunghwa; Sampedro, Carlos; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Kim, Seong-Il; Cristoloveanu, Sorin; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Riel, Heike; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Gamiz, Francisco
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