Showing results 1 to 9 of 9
Issue Date | Title | Author(s) |
---|---|---|
2020-12-28 | A 2D material-based floating gate device with linear synaptic weight update | Park, Eunpyo; Kim, Minkyung; Kim, Tae Soo; Kim, In Soo; Park, Jongkil; Kim, Jaewook; Jeong, YeonJoo; Lee, Suyoun; Kim, Inho; Park, Jong-Keuk; Kim, Gyu Tae; Chang, Jiwon; Kang, Kibum; Kwak, Joon Young |
2022-11 | A pentagonal 2D layered PdSe2-based synaptic device with a graphene floating gate | Park, Eunpyo; Seo, Jae Eun; Noh, Gichang; Jo, Yooyeon; Woo, Dong Yeon; Kim, In Soo; Park, Jongkil; Kim, Jaewook; Jeong, YeonJoo; Lee, Suyoun; Kim, Inho; Park, Jong-Keuk; Kim, Sangbum; Chang, Jiwon; Kwak, Joon Young |
2022-11 | Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n-/p-MOSFETs through Thickness-Dependent Phase Transition | Seo, Jae Eun; Park, Eunpyo; Das, Tanmoy; Kwak, Joon Young; Chang, Jiwon |
2021-01-13 | Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition | Das, Tanmoy; Yang, Eunyeong; Seo, Jae Eun; Kim, Jeong Hyeon; Park, Eunpyo; Kim, Minkyung; Seo, Dongwook; Kwak, Joon Young; Chang, Jiwon |
2021-06 | Gate-Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode | Seo, Dongwook; Seo, Jae Eun; Das, Tanmoy; Kwak, Joon Young; Chang, Jiwon |
2024-06 | Grain boundary control for high-reliability HfO 2-based RRAM | Jeong, Dong Geun; Park, Eunpyo; Jo, Yooyeon; Yang, Eunyeong; Noh, Gichang; Lee, Dae Kyu; Kim, Min Jee; Jeong, Yeonjoo; Jang, Hyun Jae; Joe, Daniel J.; Chang, Jiwon; Kwak, Joon Young |
2024-10 | Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts | Seo, Jae Eun; Gyeon, Minseung; Seok, Jisoo; Youn, Sukhyeong; Das, Tanmoy; Kwon, Seongdae; Kim, Tae Soo; Lee, Dae Kyu; Kwak, Joon Young; Kang, Kibum; Chang, Jiwon |
2021-09-15 | Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors | Seo, Jae Eun; Das, Tanmoy; Park, Eunpyo; Seo, Dongwook; Kwak, Joon Young; Chang, Jiwon |
2024-08 | Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime | Yang, Eunyeong; Hong, Sekwon; Ma, Jiwon; Park, Sang-Joon; Lee, Dae Kyu; Das, Tanmoy; Ha, Tae-Jun; Kwak, Joon Young; Chang, Jiwon |