| 2000-09-29 | Characteristics of GaN films grown on the stress-imposed Si(111) | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
| 1998-03 | Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure | Lee, HN; Lim, MH; Kim, YT; Kalkur, TS; Choh, SH |
| 1999-05 | Characteristics of Pt/SrBi2Ta2O9/Y2O3/Si ferroelectric gate capacitors | Lee, HN; Kim, YT; Choh, SH |
| 2000-02-21 | Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates | Lee, HN; Kim, YT; Choh, SH |
| 1997-01 | Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property | Park, YJ; Yeom, TH; Park, IW; Choh, SH; Min, SK |
| 1999-01 | Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors | Lee, HN; Choh, SH; Shin, DS; Kim, YT |
| 1997-01 | Effects of bottom electrode on the structural and electrical properties of PbTiO3 ferroelectric thin films | Lee, HN; Kim, YT; Choh, SH |
| 1996-01-15 | Electron-paramagnetic-resonance study of the Mn2+ luminescence center in ZnS:Mn powder and thin films | Yeom, TH; Lee, YH; Hahn, TS; Oh, MH; Choh, SH |
| 1996-11 | Mn2+ EPR characterization of thin film electroluminescent devices | Yeom, TH; Lee, SH; Lee, YH; Oh, MH; Choh, SH |
| 1999-01 | Nuclear magnetic relaxation studies of Ga-69, Ga-71, and As-75 nuclei in GaAs single crystals doped with paramagnetic impurities | Yeom, TH; Kim, IG; Choh, SH; Hong, KS; Park, YJ; Min, SK |
| 1998-05-15 | Raman study of the nitrided GaAs thin layers | Koh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH |
| 2000-09 | The effect of N+-implanted Si(111) substrate and buffer layer on GaN films | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
