Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors

Abstract

We have fabricated a metal/ferroelectric/insulator/semiconductor (MFIS) capacitor using Pt/SrBi2Ta2O9(SBT)/CeO2/Si. The CeO2 thin films were deposited by reactive sputtering at room temperature and annealed at 800, 900, and 1100 degreesC for 5 min in a halogen lamp furnace. The SET thin films were spin coated by metal-organic decomposition (MOD) method on the annealed CeO2/Si substrates. The surface morphology of SET films was affected by the substrate roughness of CeO2 thin films. The leakage current densities of SET films on the as-deposited and the 900 degreesC annealed CeO2 films were 1.9x10(-6) A/cm(2) and 6.1x10(-9)A/cm(2), respectively at -10 V.