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Issue DateTitleAuthor(s)
2006Direct electrical characteristics of GaN nanowire field effect transistor (FET) without assistance of E-beam lithography (EBL)Lee, Sang-Kwon; Seong, Han-Kyu; Choi, Ki-Chul; Cho, Narn-Kyu; Choi, Heon-Jin; Suh, Eun-Kyung; Nahm, Kee-Suk
1

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