| 2016-11-25 | Comparative study of atomic arrangements in equiatomic GeSe and GeTe films before and after crystallization | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu |
| 2015-02-15 | EXAFS spectroscopic refinement of amorphous structures of evaporation-deposited Ge-Se films | Choi, Yong Gyu; Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu |
| 2022-11 | Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films | Shin, Sang Yeol; Lee, Suyeon; Cheong, Byung-ki; Choi, Yong Gyu |
| 2018-06 | Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization | Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu |
| 2014-02-03 | Nanosecond switching in GeSe phase change memory films by atomic force microscopy | Bosse, James L.; Grishin, Ilya; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun; Kolosov, Oleg V.; Huey, Bryan D. |
| 2021-09 | Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 & nbsp;film probed via in situ EXAFS under DC electric field | Shin, Sang Yeol; Kim, Hyun; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2012-05-01 | Role of local structure in the phase change of Ge-Te films | Choi, Yong Gyu; Kovalskiy, Andriy; Cheong, Byung-Ki; Jain, Himanshu |
| 2014-09-01 | Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film | Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2014-11-18 | The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se | Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun |
