| 2010-09-06 | Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 degrees C | Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol |
| 2011-01 | Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
| 2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
| 2011-02 | Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress | Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol |
| 2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | Chun, Yoon Soo; Chang, Seongpil; Lee, Sang Yeol |
| 2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
| 2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
