Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor

Abstract

The top-source noncoplanar diagonal electrode (TS-NDE) structure was fabricated and simulated with the oxide channel layer. The structure exhibits enhanced stability and low subthreshold swing with higher mobility than those of bottom-source electrode structure thin-film transistors (TFTs). Interestingly, in this highly stable TS-NDE, the current density was highly formed through the center of the active-channel region from top-source electrode to bottom-drain electrode in the thin-film layer due to the on-current state. In other words, the TS-NDE TFT is less affected by back-interface interferences, which are the main degradation factors in oxide TFTs due to the different current path.