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Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
2015-11-011/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatmentSindhuri, V.; Son, Dong-Hyeok; Lee, Dong-Gi; Sakong, SungHwan; Jeong, Yoon-Ha; Cho, In-Tak; Lee, Jong-Ho; Kim, Yong-Tae; Cristoloveanu, Sorin; Bae, Youngho; Im, Ki-Sik; Lee, Jung-Hee
2019-04-01Characteristics of band modulation FET on sub 10 nm SOIKwon, Sehyun; Navarro, Carlos; Gamiz, Francisco; Cristoloveanu, Sorin; Galy, Phileppe; Choi, Minho; Kim, Yong Tae; Ahn, Jinho
2018-03Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETsIm, Ki-Sik; Atmaca, Gokhan; Won, Chul-Ho; Caulmilone, Raphael; Cristoloveanu, Sorin; Kim, Yong-Tae; Lee, Jung-Hee
2015-11-01Effects of sidewall MOS channel on performance of AlGaN/GaN FinFETSon, Dong-Hyeok; Jo, Young-Woo; Sindhuri, V.; Im, Ki-Sik; Seo, Jae Hwa; Kim, Yong Tae; Kang, In Man; Cristoloveanu, Sorin; Bawedin, Maryline; Lee, Jung-Hee
2017-11Extended Analysis of the Z(2)-FET: Operation as Capacitorless eDRAMNavarro, Carlos; Lacord, Joris; Parihar, Mukta Singh; Adamu-Lema, Fikru; Duan, Meng; Rodriguez, Noel; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Cristoloveanu, Sorin; Gamiz, Francisco
2016-10-03Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approachIm, Ki-Sik; Won, Chul-Ho; Vodapally, Sindhuri; Caulmilone, Raphael; Cristoloveanu, Sorin; Kim, Yong-Tae; Lee, Jung-Hee
2015-10Growth of AlN/GaN HEMT structure Using Indium-surfactantKim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
2016-10Novel AlGaN/GaN Omega-FinFETs with Excellent Device PerformancesIm, Ki-Sik; Won, Chul-Ho; Seo, Jae Hwa; Kang, In Man; Vodapally, Sindhuri; Lee, Yong Soo; Lee, Jung-Hee; Kim, Yong-Tae; Cristoloveanu, Sorin
2016-06Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channelIm, Ki-Sik; Kang, Hee-Sung; Kim, Do-Kywn; Vodapally, Sindhuri; Park, YoHan; Lee, Jae-Hoon; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
2017-12Z(2)-FET as Capacitor-Less eDRAM Cell For High-Density IntegrationNavarro, Carlos; Duan, Meng; Parihar, Mukta Singh; Adamu-Lema, Fikru; Coseman, Stefan; Lacord, Joris; Lee, Kyunghwa; Sampedro, Carlos; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Kim, Seong-Il; Cristoloveanu, Sorin; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Riel, Heike; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Gamiz, Francisco
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