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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
-Conductive Oxide Interlayer between Phase Change Materials and Bottom Electrode in PRAMHyun-Goo Jun; Dongbok Lee; CHEONG, BYUNG KI; Ki-Bum Kim
-Enhanced Thermal Efficiency of Ge2Sb2Te5 Phase Change Flims Using the Microstructure ModificationDongbok Lee; Ho-ki Lyeo; Lee Hyun Seok; Hyun-Goo Jun; CHEONG, BYUNG KI; Ki-Bum Kim
-Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristicsDong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim
-Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrodeDae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim
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