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Issue DateTitleAuthor(s)
-Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si SubstratesShin Jaekyun; Kim Kyung-Ho; Doo-Seung Um; Hochan Lee; Seongdong Lim; Chang, Joonyeon; Koo, Hyun Cheol; Min-Wook Oh; Hyunhyub Ko; Kim Hyung-jun
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