| 2001-06 | Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers | Son, JH; Kim, TG; Shin, SW; Kim, HB; Lee, WS; Im, S; Song, JH; Whang, CN; Chae, KH |
| 2001-11-01 | Characterization and light-emitting properties of Au/SiOx/p-Si and Au/Ni-implanted-SiOx/p-Si structures | Bae, HS; Lee, WS; Kim, TG; Whang, CN; Song, JH; Im, S |
| 1998-12 | Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Defect vs. nanocrystal luminescence emitted in Si-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-10 | Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Bae, HS; Im, S; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94 | Im, S; Oh, MS; Joo, MH; Kim, HB; Kim, HK; Song, JH |
| 1999-01 | Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers | Oh, MS; Joo, MH; Im, S; Kim, HB; Kim, HK; Song, JH |
| 2000-02-14 | Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes | Joo, MH; Lee, KH; Song, JH; Im, S |
| 2000-08-15 | Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers | Kim, HB; Kim, TG; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Song, JH |
| 2002-04-01 | Electroluminescence mechanism in SiOx layers containing radiative centers | Bae, HS; Kim, TG; Whang, CN; Im, S; Yun, JS; Song, JH |
| 1999-02-15 | Enhancing defect-related photoluminescence by hot implantation into SiO2 layers | Im, S; Jeong, JY; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-07 | Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination | Joo, MH; Park, KM; Choi, WY; Song, JH; Im, S |
| 2003-05 | Formation and characterizations of ultra-shallow p(+)-n junctions using B10H14 ion implantation | Jeon, GY; Kim, JS; Whang, CN; Im, S; Song, JH; Song, JH; Choi, WK; Kim, HK |
| 2000-10 | Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Kim, SO; Woo, JJ; Song, JH |
| 2001-08-15 | Modification of magnetic properties of epitaxial Co/Cu multilayers by 1 MeV C+ irradiation | Sung, MC; You, DG; Park, HS; Lee, JC; Ie, SY; Kim, IS; Lee, J; Whang, CN; Im, S; Jeong, K; Kim, TG; Yang, JS; Song, JH |
| 2001-01-15 | Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
| 2001-06 | Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx thin films | Park, KM; Yi, S; Moon, S; Im, S |
| 2000-01-19 | Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature | Kim, HB; Son, JH; Chae, KH; Jeong, JY; Lee, WS; Im, S; Song, JH; Whang, CN |
| 1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
| 2000-03 | Photoluminescences from Si nanocrystals in ion-beam-mixed Si/SiO2 layers | Chae, KH; Son, JB; Kim, HB; Im, S; Lyo, IW; Whang, CN |
| 2001-06 | Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures | Kim, HY; Kim, JH; Kim, YJ; Chae, KH; Whang, CN; Song, JH; Im, S |
| 1997-02-15 | SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100) | Im, S; Song, JH; Lie, DYC; Eisen, F; Atwater, H; Nicolet, MA |
| 1998-12 | The origin of photoluminescence in Ge-implanted SiO2 layers | Kim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH |
| 2000-01-19 | Violet and orange luminescence from Ge-implanted SiO2 layers | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
| 2004-02 | Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation | Son, JH; Kim, HB; Whang, CN; Sung, MC; Jeong, K; Im, S; Chae, KH |
| 1999-11 | Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers | Chae, KH; Son, JH; Chang, GS; Kim, HB; Jeong, JY; Im, S; Song, JH; Kim, KJ; Kim, HK; Whang, CN |
