| 2023-11 | A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect | Kim, Min Gye; Jeong, Jun Hyung; Ma, Jin Hyun; Park, Min Ho; Kim, Seunghwan; Park, Soohyung; Kang, Seong Jun |
| 2024-05 | A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO2 single layer | Park, Min Ho; Jeong, Jun Hyung; Kim, Wonsik; Park, Soohyung; Lim, Byeong Min; Lee, Hong-Sub; Kang, Seong Jun |
| 2023-11 | Boosting the Visible Light Optoelectronic Synaptic Characteristics of Solution-Processed IGZO Transistors via Vertically Diffused Cd Dopants | Jeong, Jun Hyung; Park, Min Ho; Jeong, Hanseok; Kim, Wonsik; Park, Soohyung; Jeon, Woojin; Kang, Seong Jun |
| 2023-03 | Enhanced performance of flexible quantum dot light-emitting diodes using a low-temperature processed PTAA hole transport layer | Ha, Hyoun Ji; Kim, Min Gye; Ma, Jin Hyun; Jeong, Jun Hyung; Park, Min Ho; Kang, Seong Jae; Kim, Wonsik; Park, Soohyung; Kang, Seong Jun |
| 2023-02 | Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Solution-Processable Highly Conductive Spinel Structure CuCo2O4 Hole Injection Layer | Park, Min Ho; Kim, Min Gye; Ma, Jin Hyun; Jeong, Jun Hyung; Ha, Hyoun Ji; Wonsik Kim; Park, Soohyung; Kang, Seong Jun |
| 2024-06 | High Rejection-Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer | Ma, Jin Hyun; Jeong, Jun Hyung; Kang, Seong Jae; Park, Min Ho; Ha, Hyoun Ji; Kim, Eojin; You, Seungyun; Kim, Wonsik; Park, Soo hyung; Kang, Seong Jun |
| 2024-07 | Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio | Ha, Hyoun Ji; Kang, Seong Jae; Jeong, Jun Hyung; Ma, Jin Hyun; Park, Min Ho; Kim, Wonsik; Ha, Aelim; Kim, Seunghwan; Park, Soohyung; Kang, Seong Jun |
