Browsing byAuthorKANG JOON MO

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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
-Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4.KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki
-Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근
-Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs grown by MOCVD.SON CHANG-SIK; KANG JOON MO; KIM YOUN; KIM MOO SUNG; Min Suk-Ki

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