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Showing results 1 to 8 of 8

Issue Date	Title	Author(s)
-	Electrical spin injection and detection in a GaAs(110) channel	KIM HANSUNG; Park, hee-gyum; Kim Seong Kwang; Hyeong rak Lim; Koo, Hyun Cheol; Kim Hyung-jun
-	Epitaxial growth of strained germanium using InxAl1-xAs buffer layer	KIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
-	Fabrication of Ultra-low Dit(E) InGaAs MOSFETs	Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; Chang Zoo Kim; KIM HANSUNG; SONG, JIN-DONG; Sung-Jin Choi; Dae Hwan Kim; Choi, Won Jun; Kim Hyung-jun; Dong Myong Kim; Sanghyeon Kim
-	Growth temperature dependent Ge epitaxy on GaAs(100) substrate	LIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
-	Impact of Ground Plane Doping on InGaAs-OI MOSFETs	Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; 김재원; 김창주; KIM HANSUNG; SONG, JIN-DONG; 최성진; 김대환; Choi, Won Jun; Kim Hyung-jun; 김동명; Sanghyeon Kim
-	Thin body n- and p-GaAs FET on Si for CMOS integration	Shim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-	Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technology	Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
-	Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technology	Shim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun

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