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Showing results 1 to 6 of 6

Issue DateTitleAuthor(s)
2005-05A nonvolatile memory based on reversible phase changes between fcc and hcpAhn, DH; Kang, DH; Cheong, BK; Kwon, HS; Kwon, MH; Lee, TY; Jeong, JH; Lee, TS; Kim, IH; Kim, KB
2005-05-01Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phasesLee, BS; Abelson, JR; Bishop, SG; Kang, DH; Cheong, BK; Kim, KB
2002Live 3-D video in volumetric displaySon, JY; Shestak, SA; Huschyn, VP; Ulizko, VA; Kang, DH
2004-08Lower voltage operation of a phase change memory device with a highly resistive TiON layerKang, DH; Ahn, DH; Kwon, MH; Kwon, HS; Kim, KB; Lee, KS; Cheong, BK
2000-11Synthesis of hole-transporting hydrazone dendrimersNam, H; Kang, DH; Kim, JK; Park, SY
2005-12-19Time-resolved analysis of the set process in an electrical phase-change memory deviceKang, DH; Cheong, B; Jeong, J; Lee, TS; Kim, IH; Kim, WM; Huh, JY
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