| 2005-05 | AlGaAs/GaAs NpnP depleted optical thyristor using bottom mirror layers | Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH |
| 1999-03 | Cathodoluminescence of diamond films grown on pretreated Si(001) substrates by microwave plasma chemical vapour deposition | Kim, DG; Seong, TY; Baik, YJ; Kalceff, MAS; Phillips, MR |
| 2002-07-01 | Design and measurement of waveguide-type PnpN optical thyristors for optical communications | Kim, DG; Lee, HH; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Futakuchi, N; Nakano, Y |
| 2002-04-01 | Effects of annealing on the microstructures and mechanical properties of UN/A1N nano-multilayer films prepared by ion-beam assisted deposition | Kim, DG; Seong, TY; Baik, YJ |
| 2000-02-17 | Improved performances or AlGaAs-GaAsNpnP optical thyristor using bottom mirror layers | Kim, DG; Lee, JJ; Choi, YW; Lee, S; Woo, DH; Kang, BK; Kim, SH |
| 2003-01-13 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m | Kim, DG; Lee, HH; Choi, WK; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Nakano, Y |
| 2005-01-10 | Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window | Choi, WK; Kim, DG; Choi, YW; Lee, S; Woo, DH; Kim, SH |
| 1997-06-23 | Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers | Seong, TY; Kim, DG; Choi, KK; Baik, YJ |
| 2003-04 | Optical characteristics of PnpN optical thyristor operating at 1.55 mu m | Kim, DG; Lee, HH; Choi, WK; Lee, JJ; Choi, YW; Lee, S; Woo, DH; Byun, YT; Kim, JH; Kim, SH; Futakuchi, N; Nakano, Y |
| 2001-10-01 | Oxidation behavior of TiN/AlN multilayer films prepared by ion beam-assisted deposition | Kim, DG; Seong, TY; Baik, YJ |
| 1998-06 | Structural investigation of the bias-enhanced nucleation and growth of diamond films by microwave plasma chemical vapor deposition | Kim, DG; Seong, TY; Baik, YJ |
| 2000-09 | Waveguide-type PnpN optical thyristor operating at 1.55 mu m | Kim, DG; Lee, JJ; Choi, YW; Lee, S; Kang, BK; Kim, SH; Futakuchi, N; Nakano, Y |
