Waveguide-type PnpN optical thyristor operating at 1.55 mu m

Authors
Kim, DGLee, JJChoi, YWLee, SKang, BKKim, SHFutakuchi, NNakano, Y
Issue Date
2000-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.9, pp.1219 - 1221
Abstract
Waveguide-type PnpN depleted optical thyristors operating at 1.55 mu m are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers, The thyristors show sufficient nonlinear s-shape I-V characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with L = 300 mu m and 350 mu m respectively are measured.
Keywords
OPTOELECTRONIC SWITCH; HETEROSTRUCTURE; OPTOELECTRONIC SWITCH; HETEROSTRUCTURE; optical communication systems; spontaneous emission; waveguide optical thyristor
ISSN
1041-1135
URI
https://pubs.kist.re.kr/handle/201004/141141
DOI
10.1109/68.874241
Appears in Collections:
KIST Article > 2000
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