Waveguide-type PnpN optical thyristor operating at 1.55 mu m
- Authors
- Kim, DG; Lee, JJ; Choi, YW; Lee, S; Kang, BK; Kim, SH; Futakuchi, N; Nakano, Y
- Issue Date
- 2000-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE PHOTONICS TECHNOLOGY LETTERS, v.12, no.9, pp.1219 - 1221
- Abstract
- Waveguide-type PnpN depleted optical thyristors operating at 1.55 mu m are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum-well (MQW) and InGaAsP bulk layers for the active n- and p-layers, The thyristors show sufficient nonlinear s-shape I-V characteristics and spontaneous emission along the waveguide. Very low switching voltages of 2.1 and 2.0 (V) for bulk and MQW thyristors with L = 300 mu m and 350 mu m respectively are measured.
- Keywords
- OPTOELECTRONIC SWITCH; HETEROSTRUCTURE; OPTOELECTRONIC SWITCH; HETEROSTRUCTURE; optical communication systems; spontaneous emission; waveguide optical thyristor
- ISSN
- 1041-1135
- URI
- https://pubs.kist.re.kr/handle/201004/141141
- DOI
- 10.1109/68.874241
- Appears in Collections:
- KIST Article > 2000
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