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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2018-11-05Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistorsJeon, Dae-Young; Kim, Do-Kywn; Park, So Jeong; Koh, Yumin; Cho, Chu-Young; Kim, Gyu-Tae; Park, Kyung-Ho
2015-10Growth of AlN/GaN HEMT structure Using Indium-surfactantKim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
2016-06Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channelIm, Ki-Sik; Kang, Hee-Sung; Kim, Do-Kywn; Vodapally, Sindhuri; Park, YoHan; Lee, Jae-Hoon; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
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