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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2015-09Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrateKim, SangHyeon; Park, Min-Su; Geum, Dae-Myeong; Kim, Hosung; Ryu, GuenHwan; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Choi, Won Jun
2017-07-24InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-offKim, Hosung; Ahn, Seung-Yeop; Kim, Sanghyeon; Ryu, Geunhwan; Kyhm, Ji Hoon; Lee, Kyung Woon; Park, Jung Ho; Choi, Won Jun
2018-03-05Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substratesGeum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon
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