| 2021-10 | A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAs | Kim, Hansung; Ju, Gunwu; Kim, Seung-Hwan; Lee, Kiyoung; Jeong, Myoungho; Koo, Hyun Cheol; Kim, Hyung-jun |
| 2024-02 | Charge transfer mechanism for realization of double negative differential transconductance | Han, Kyu Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Jong-Hyun; Song, Sungjoo; Yu, Hyun-Yong |
| 2024-03 | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon | Han, Kyu Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Kim, Jong-Hyun; Hwang, Seong-Hyun; Kim, Min-Su; Song, Sung-Joo; Yu, Hyun-Yong |
| 2023-03 | Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure | Song, Sungjoo; Kim, Seung-Hwan; Kim, Seung-Geun; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong |
| 2023-06 | Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor | Hwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Min-Su; Han, Kyu-Hyun; Song, Sungjoo; Kim, Jong-Hyun; Park, Euyjin; Jin, Dong-Gyu; Yu, Hyun-Yong |
| 2024-10 | Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge | Kim, Jong-Hyun; Kim, Seung-Hwan; Yu, Hyun-Yong |
| 2023-07 | Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier | Kim, Min-Su; Hwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Jong-Hyun; Park, Euyjin; Han, Kyu-Hyun; Yu, Hyun-Yong |
| 2024-06 | High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices | Kang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang-Min; Lee, Nayeong; Lee, Ryong-Gyu; Kim, Gahye; Kim, Seung-Hwan; Kim, Hyung-jun; Yang, Cheol-Woong; Jeon, Jongwook; Kim, Yong-Hoon; Lee, Sungjoo |
| 2023-03 | Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer | Kim, Min-Su; Park, Euyjin; Kim, Seung-Geun; Park, Jae-Hyeun; Kim, Seung-Hwan; Han, Kyu-Hyun; Yu, Hyun-Yong |
| 2023-07 | Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide | Kim, Jong-Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Jiyoung; Yu, Hyun-Yong |
| 2023-12 | In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors | Song, Sungjoo; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong |
| 2024-10 | Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit | Park, Euyjin; Kim, Seung-Hwan; Min, Seong-Ji; Han, Kyu-Hyun; Kim, Jong-Hyun; Kim, Seung-Geun; Ahn, Tae-Hang; Yu, Hyun-Yong |
