Spin-Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing

Authors
Kim, Seong BeenLee, Je-JunChoi, DongwonKim, Seung-HwanAhn, Jeong UngHan, Ki HyukPark, Tae-EonLee, OukjaeLee, Ki-YoungHong, SeokminMin, Byoung-ChulKim, Hyung-junHwang, Do KyungKoo, Hyun Cheol
Issue Date
2025-01
Publisher
AMER CHEMICAL SOC
Citation
ACS Applied Electronic Materials, v.7, no.1, pp.571 - 581
Abstract
A synaptic function is demonstrated using spin-charge conversion in a Rashba system. In an asymmetric quantum well channel, fast-moving charges induce a Rashba effective magnetic field, which separates spin-up and spin-down potentials. The ferromagnet detects these spin-dependent potentials, corresponding to the spin information on the channel. The multiple ferromagnetic electrodes, each with different switching fields, probe their respective spin potentials, and the output terminal reads the superposition of the detected potentials, thereby realizing multiple voltage states. These multiple states are systematically modulated and changed to any desired state directly, enabling both the potentiation and depression of synaptic behavior. In this memristive function device, both charge-to-spin and spin-to-charge conversions are demonstrated in a single device, consistent with the reciprocal relation. Additionally, neuromorphic pattern recognition is clearly demonstrated by controlling the V max/V min ratio and offset resistance.
Keywords
DOMAIN-WALL MOTION; HALL; spin-chargeconversion; Rashba spin-orbitcoupling; multistate memory; artificial synapses; neuromorphic computing
URI
https://pubs.kist.re.kr/handle/201004/151584
DOI
10.1021/acsaelm.4c02048
Appears in Collections:
KIST Article > Others
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