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Showing results 1 to 9 of 9

Issue DateTitleAuthor(s)
2023-03Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displaysJin, Taewon; Kim, Sanghyeon; Han, Jae-Hoon; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Sun, Xinkai; Kim, Cheol Jun; Park, Juhyuk; Kim, Younghyun
2024-09Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETsAn, Seong Ui; Ahn, Dae-Hwan; Ju, Gijun; Chen, Simin; Ji, Yo Seop; Han, Jae-Hoon; Kim, Jaekyun; Kim, Younghyun
2024-09First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 sNoh, Tae Hyeon; Chen, Simin; Kim, Hyo-Bae; Jin, Taewon; Park, Seoung Min; An, Seong Ui; Sun, Xinkai; Kim, Jaekyun; Han, Jae-Hoon; Ahn, Ji-Hoon; Ahn, Dae-Hwan; Kim, Younghyun
2021-06Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A ReviewKim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; Kim, Sanghyeon
2024-04High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane PassivationSun, Xinkai; Han, Jae-Hoon; Xiao, Zhenyuan; Chen, Simin; Jin, Taewon; Noh, Taehyeon; Park, Seoungmin; Kim, Jaekyun; Jin, Jidong; Kim, Younghyun
2024-07Improving the Open-Circuit Voltage of III-V Layer-Filtered Si Subcells for Monolithic III-V/Si Tandem Solar CellsJu, Eunkyo; Madarang, May Angelu; Kim, Yeonhwa; Chu, Rafael Jumar; Laryn, Tsimafei; Kim, Younghyun; Kim, Inho; Kim, Tae Soo; Jeon, Sunghan; Lee, In-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan
2023-08Role of sulfuric acid in thermostabilization and carbonization of lyocell fibersJang, Minjeong; Choi, Dongcheon; Kim, Younghyun; Kil, Hyun-Sig; Kim, Sung-Kon; Jo, Seong Mu; Lee, Sungho; Kim, Sung-Soo
2023Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory ApplicationChen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Kim, Younghyun
2024-07TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applicationsChen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Kim, Younghyun
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