Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Authors
Jin, TaewonKim, SanghyeonHan, Jae-HoonAhn, Dae-HwanAn, Seong UiNoh, Tae HyeonSun, XinkaiKim, Cheol JunPark, JuhyukKim, Younghyun
Issue Date
2023-03
Publisher
The Royal Society of Chemistry
Citation
Nanoscale Advances, v.5, no.5, pp.1316 - 1322
Abstract
We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.
Keywords
HF0.5ZR0.5O2 THIN-FILMS; THRESHOLD VOLTAGE; PIXEL CIRCUIT; GRAIN-SIZE; COMPENSATION; MEMORY; MOBILITY
ISSN
2516-0230
URI
https://pubs.kist.re.kr/handle/201004/113978
DOI
10.1039/d2na00713d
Appears in Collections:
KIST Article > 2023
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