Showing results 1 to 9 of 9
Issue Date | Title | Author(s) |
---|---|---|
2025-01 | Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications | Kuk, Song-Hyeon; Ko, Kyul; Kim, Bong Ho; Kim, Joon Pyo; Han, Jae-Hoon; Kim, Sang-Hyeon |
2024-11 | Channel Mobility With Higher-k Doped-HfO₂ for CMOS Logic | Kuk, Song-Hyeon; Ko, Kyul; Kim, Bong Ho; Lim, Hyeong-Rak; Kim, Joon Pyo; Han, Jae-Hoon; Kim, Sang-Hyeon |
2024-10 | Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation | Ko, Kyul; Ahn, Dae-Hwan; Jeong, Jai-Youn; Ju, Byeong-Kwon; Han, Jae-Hoon |
2023-12 | Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties | Ko, Kyul; Ahn, Daehwan; Suh, Hoyoung; Ju, Byeong-Kwon; Han, Jae Hoon |
2022-06 | Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing | Daehwan, Ahn; HU, SU MAN; Ko, Kyul; Park, Dong Hee; Suh, Ho young; Kim, Gyu-Tae; Han, Jae Hoon; SONG, JIN DONG; Jeong, Yeon Joo |
2024-05 | Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET | Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; Park, Ji-Hyeon; Jeon, Dae-Woo; Kim, Sang-Hyeon |
2021-06 | Long-term reliable physical health monitoring by sweat pore-inspired perforated electronic skins | Yeon, Hanwool; Lee, Haneol; Kim, Yeongin; Lee, Doyoon; Lee, Youngjoo; Lee, Jong-Sung; Shin, Jiho; Choi, Chanyeol; Kang, Ji-Hoon; Suh, Jun Min; Kim, Hyunseok; Kum, Hyun S.; Lee, Jaeyong; Kim, Daeyeon; Ko, Kyul; Ma, Boo Soo; Lin, Peng; Han, Sangwook; Kim, Sungkyu; Bae, Sang-Hoon; Kim, Taek-Soo; Park, Min-Chul; Joo, Young-Chang; Kim, Eunjoo; Han, Jiyeon; Kim, Jeehwan |
2021-11 | Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2van der Waals Heterostructure | Ahn, Jongtae; Ko, Kyul; Kyhm, Ji-hoon; Ra, Hyun-Soo; Bae, Heesun; Hong, Sungjae; Kim, Dae-Yeon; Jang, Jisu; Kim, Tae Wook; Choi, Sungwon; Kang, Ji-Hoon; Kwon, Namhee; Park, Soohyung; Ju, Byeong-Kwon; Poon, Ting-Chung; Park, Min-Chul; Im, Seongil; Hwang, Do Kyung |
2024-07 | Responsivity Enhancement of Wafer-Bonded In0.53Ga0.47As Photo-Field-Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling | Jeon, Sung-Han; Ahn Daehwan; Ko, Kyul; Choi, Won Jun; Song, Jin-Dong; Choi, Woo-Young; Han, Jae-Hoon |