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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
1994-08CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4KIM, SI; KIM, Y; KIM, MS; KIM, CK; MIN, SK; LEE, C
1993-01CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESSKIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS
1993-05-01LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAASKIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C
1991-04-29METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAASCHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, C
1994TEM STUDIES OF PLASMA-DEPOSITED TUNGSTEN AND TUNGSTEN NITRIDE BARRIERS FOR THERMALLY STABLE METALLIZATIONLEE, CW; KIM, YT; MIN, SK; LEE, C; LEE, JY; PARK, TW
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