| 1991-02 | DISLOCATION-ACCELERATED DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC |
| 1990-11 | ELECTRIC-FIELD-ENHANCED DISSOCIATION OF THE HYDROGEN-SI DONOR COMPLEX IN GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, CC |
| 1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
| 1993-11 | EXPERIMENTAL AND THEORETICAL PHOTOLUMINESCENCE STUDY OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; KIM, MS; MIN, SK; LEE, CC |
| 1993-12 | HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS | KIM, SI; KIM, Y; LEE, MS; KIM, MS; MIN, SK; LEE, CC |
| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1989-08 | X-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE | KIM, HS; KIM, EK; MIN, SK; LEE, CC |
