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Issue DateTitleAuthor(s)
-Characteristics of phase change memory devices based on Ge-doped SbTe and its derivativeCHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook
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