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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
-Epitaxial growth of strained germanium using InxAl1-xAs buffer layerKIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
-Growth temperature dependent Ge epitaxy on GaAs(100) substrateLIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
-Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technologyShim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
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