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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2003-04Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-SiNoh, YS; Chatterjee, S; Nandi, S; Samanta, SK; Maiti, CK; Maikap, S; Choi, WK
2003-07-28Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layersLee, JH; Maikap, S; Kim, DY; Mahapatra, R; Ray, SK; No, YS; Choi, WK
2005-04Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substratesMaikap, S; Lee, JH; Mahapatra, R; Pal, S; No, YS; Choi, WK; Ray, SK; Kim, DY
2002-10-24Investigations on Ta2O5/ZnO insulator-semiconductor interfacesNandi, SK; Choi, WK; Noh, YS; Oh, MS; Maikap, S; Hwang, NM; Kim, DY; Chatterjee, S; Samanta, SK; Maiti, CK
2004-01Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayersMaikap, S; Lee, JH; Kim, DY; Mahapatra, R; Ray, SK; Song, JH; No, YS; Choi, WK
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